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2SC4468
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1695) sAbsolute maximum ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 200 140 6 10 4 100(Tc=25C) 150 -55 to +150 Unit V V V A A W C C
Application : Audio and General Purpose
(Ta=25C) Ratings 10max 10max 140min 50min 0.5max 20typ 250typ V MHz pF
20.0min 4.0max 3 1.05 +0.2 -0.1 5.450.1 B C E 5.450.1 0.65 +0.2 -0.1 1.4
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB hFE Rank Conditions VCB=200V VEB=6V IC=50mA VCE=4V, IC=3A IC=5A, IB=0.5A VCE=12V, IE=-0.5A VCB=10V, f=1MHz
External Dimensions MT-100(TO3P)
5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1
Unit
A A
19.90.3
V
4.0
a b
o3.20.1
2
O(50 to100), P(70 to140), Y(90 to180)
sTypical Switching Characteristics (Common Emitter)
VCC (V) 60 RL () 12 IC (A) 5 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.5 IB2 (A) -0.5 ton (s) 0.24typ tstg (s) 4.32typ tf (s) 0.40typ
Weight : Approx 6.0g a. Part No. b. Lot No.
I C - VCE Characteristics (Typical)
A 0m
VCE( sat ) - IB Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at)( V ) 3
I C - VBE Temperature Characteristics (Typical)
10 (V C E= 4V)
10
0m
40
30
2
m 00
A
150
mA
A
8 Collector Current I C (A)
100m
A
8 Collector Current I C( A)
75 m A
2
6
50 mA
6
Cas
(Case
2
25C
2 IC=10A 5A 0 0 0.5 1.0 Base Current I B( A) 1.5 2.0 0 0
C (
I B= 10mA
0
0
1
2
3
4
-30C
125
(Case
20mA
1
Temp
e Te
4
1 Base-Emittor Voltage V B E( V)
Temp)
4
mp)
)
2
Collector-Emitter Voltage V C E( V)
(V C E= 4V) 200 DC Cur rent Gain h FE DC Curr ent Gain h FE 300 125C 100 25C -30C
(VCE=4V)
j-a(C/W)
hFE - IC Characteristics (Typical)
hFE - I C Temperature Characteristics (Typical)
j-a - t Characteristics
3
Typ
100
Transient Thermal Resistance
1 0.5
50
50
20 0.02
0.1
0.5
1
5
10
20 0.02
0.1
0.5
1
5
10
0.1
1
10
100 Time t(ms)
1000 2000
Collector Current I C (A)
Collector Current I C( A)
f T - IE Characteristics (Typical)
(VCE=12V) 40 30
Safe Operating Area (Single Pulse)
100
3m
P c - T a Derating
10 Cut- off F req uency f T( M H Z) 30 Collector Curre nt I C( A)
10 0m
M aximum Power Dissipa ti on P C( W)
s
W
10
Typ
5
DC
ith
ms
s
In fin ite he
20
50
at si nk
1 0.5 Without Heatsink Natural Cooling
10
0 -0.02
-0.1
-1 Emitter Current I E( A)
-10
0.1 3
5
10
50
100
200
3.5 0
Without Heatsink 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E( V)
Ambient Temperature Ta(C)
109

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